Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, Pages 305-308 , 02/07/2018

Sub-30 ppm/oC high-frequency temperature-compensated CMOS relaxation oscillator

Siraporn Sakphrom, Thunyawat Limpiti, Noraset Wichaipanich, Apinunt Thanachayanont

Abstract

This paper describes the design and realization of a high-frequency temperature-compensated CMOS relaxation oscillator in a 0.35-µm CMOS technology. The proposed oscillator employs the current-controlled topology with a resistive source-degeneration transconductor and a current comparator in order to achieve high oscillation frequency and low power dissipation. Temperature compensation of the oscillation frequency is achieved by simulation results show that, at a nominal oscillation frequency of 32.48 MHz, the proposed oscillator exhibited a temperature coefficient of less than 28.41 ppm/<sup>o</sup>C over a temperature range of -40<sup>o</sup>C to +120<sup>o</sup>C, while consuming 241.5 µW from a 2.5-V single power supply voltage.

Document Type

Conference Paper

Source Type

Conference Proceeding

ISBN

[9781538635551]

ISSN

Keywords

Current controlled oscillatorRelaxation oscillatorTemperature compensated

Funding Agency

Walailak University


Bibliography


Sakphrom, S., Limpiti, T., Wichaipanich, N., & Thanachayanont, A. (2018). Sub-30 ppm/oC high-frequency temperature-compensated CMOS relaxation oscillator. Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology305-308. doi:10.1109/ECTICon.2018.8619891

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